Engineering, Energy, Transport AIC

Oleksandr Wozniak - сandidate of Science (Engineering), Associate Professor of the Department of
Electric Power Engineering, Electrical Engineering and Electromechanics of Vinnitsa National Agrarian
University (3 Soniachna St., Vinnitsa, 21008, Ukraine, email: alex.voz1966@gmail.com).
Andriy Vidmysh - Candidate of Science (Engineering), Associate Professor of the Department of Electric
Power Engineering, Electrical Engineering and Electromechanics of Vinnitsa National Agrarian University
(3 Soniachna St., Vinnitsa, 21008, Ukraine, email: andrijvydmysh1966@gmail.com).
Andriy Stuts - аssistant Professor at Vinnitsa National Agrarian University (3 Soniachna St., Vinnitsa,
21008, Ukraine, email: shtuts1989@gmail.com).

The level of social and economic development of modern society is determined by the volume, speed and
quality of information processing by methods and technical means. Measurement and information
processing systems are becoming an integral part of production automation.
The development of radio electronics is inextricably linked with the development of measurements, and
the state of modern radio electronics is largely determined by the level of development of measurement
methods and the availability of sufficiently advanced measuring equipment to measure the parameters of
radio-electronic devices, in particular transistors, allows: first, exploitation; second, to provide the source
material for calculating the devices; third, to judge their internal properties and technological features in
an average way; fourth, to design new, high-quality devices.
The intensification and automation of the processes of production, complication and expansion of the
front of scientific experiments entails the need to develop fundamentally new methods and means of
measuring transistor parameters based on new algorithms and computers.
Increasing the level of semiconductor devices, improving their performance, will inevitably affect
potential stability over a wide frequency range. Classical methods and standard measuring equipment arenot designed to measure the parameters of potentially unstable transistors. The measurement systems are
uncontrollably excited, which increases the measurement error. Therefore, the current task is to measure
the parameters of both transistors in particular and quadruplets in general, in the frequency range of
potential instability.
The clock speed at which modern computer technology operates is very close to the microwave range
(ultra high frequencies), which makes the problem of measuring and calculating various functional units
of computers and operating elements quite relevant.
The development of new methods and means for measuring the parameters of potentially unstable
quadruplets in the microwave range is an important scientific area, which can significantly improve the
accuracy of their measurement on standard equipment.
Improving the performance of the microwave range devices can be achieved both through the use of a
fundamentally new element base and through the use of new circuit designs. Promising in this regard is
the direction of using the reactive properties of transistors, as well as transistor structures with a negative
resistance for the construction of information-measuring systems and operating and computing devices of
the microwave range.
The graphical methods for determining the parameters of an equivalent four-pole according to the
measurement results are, as a rule, much more convenient than analytical ones. Having a mathematical
equation and its graphical interpretation, it is relatively easy to determine the required quantities by
solving graphical techniques. There are several ways of graphically depicting the relationships that
characterize the impedance (conductivity). The following two are the most convenient:
1) pie chart of total resistance in rectangular coordinates [1];
2) circular diagram of the total resistance in polar coordinates, proposed for the first time by Soviet
scientist AR Volpert [2].

[1] Bessonov, L. A. (1973). Theoretical foundations of electrical engineering. M.: High school. [in
Russian].
[2] Smith, F. (1976). Pie charts in radio electronics.(English Trans.). M .: Svyaz. [in Russian].
[3] Bogachev, V. M., Nikiforov, V.V. (1978).Transistor power amplifiers. M .: Energy. [in Russian].
[4] Wozniak, O. M., Rudik, A. V. (1998). The method of measuring the complete system of Y-parameters
of the conductivity matrix of microwave quadruplets. Proceedings of the International Symposium :
Appendix to the All-Ukrainian scientific and technical journal "Vibrations in Engineering and
Technology". (pp. 308–310). WITH. [in Ukrainian].
[5] Bova, A. T., Leichtman, I. B. (1968). Measurement of parameters of waveguide elements. Kyiv:
Technology. [in Russian].
[6] Filinyuk, M. A., Wozniak, O. M, Kurzanov I. I., Ogorodnik O. V. (2017). Ukrainian patent
No.18059 A, NOZN 11/00, Impedansnyi prystrii. Ukraine: State Intellectual Property Service of
Ukraine. [in Ukrainian].
[7] Filinyuk, N. A., Peskov S. N., Pavlov, S. N. (1982). Determination of parameters of the physical
equivalent circuit of RF transistors. Radioelectronics (Izv. Higher education institutions), 12, 38–43.
[in Russian].
[8] Abubakirov, B. A., Gudkov, K. G., Nechaev, E. V. (1984). Measurement of parameters of radio
circuits. In V. G. Andrushchenko, B. P. Fativa (Eds.). M .: Radio and Communication. [in Russian].
[9] Filinyuk, M. A. Ogorodnik, K. V. (2005). Information-measuring system for determining the
parameters of active quadrupeds. Control and Control in Complex Systems : Abstracts of the VIII
International Conference (pp. 73). Vinnytsia. [in Ukrainian].
[10] Filinyuk, N. (1987). Active microwave filters on transistors. M.: Radio and communication. [in
Russian].
[11] Filinyuk, M. A., Ogorodnik, K. V., Lazarev, O. O. (2005). Ukrainian patent No. 7267, MKI
G01R27/28. Method of measuring non-standard system of S-parameters in quadrupole. Ukraine: State
Intellectual Property Service of Ukraine. [in Ukrainian].